Intel
has ordered the semiconductor industry's first EUV lithography beta
system. The ASML tool will be delivered in 2005 to Intel's 300-mm
logic technology development fab in Hillsboro, OR. The transaction
marks the emergence of extreme-UV lithography from the R&D lab
into the commercial world of chip production.
Intel believes the system will give the chipmaker a leg up on internal
development of EUV lithography processes for 45-nm chips, which
are scheduled for production in 2007. Based in Veldhoven, The Netherlands,
ASML is the only supplier with next-generation lithography beta
systems and high-volume manufacturing tools for the 45-nm device
generation, Intel asserts.
ASML says the EUV tool incorporates a dual-stage architecture similar
to its Twinscan platform. The supplier had to build entirely new
engineering and subsystems modules to accommodate the vacuum environment
required by EUV's short light wavelength. The wavelength of EUV
light is 13.5 nm, or more than 10 times shorter than current lithographic
techniques, ASML points out.
ASML says the tool's optical path, reticle, and wafer stages are
housed in vacuum minienvironments. The system also uses reflective
optics and reflective reticles, unlike current state-of-the-art
systems.