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MicroMagazine.com

INDUSTRY NEWS

EUV lithography moves from lab to fab as Intel orders first beta tool from ASML

Intel has ordered the semiconductor industry's first EUV lithography beta system. The ASML tool will be delivered in 2005 to Intel's 300-mm logic technology development fab in Hillsboro, OR. The transaction marks the emergence of extreme-UV lithography from the R&D lab into the commercial world of chip production.

Intel believes the system will give the chipmaker a leg up on internal development of EUV lithography processes for 45-nm chips, which are scheduled for production in 2007. Based in Veldhoven, The Netherlands, ASML is the only supplier with next-generation lithography beta systems and high-volume manufacturing tools for the 45-nm device generation, Intel asserts.

ASML says the EUV tool incorporates a dual-stage architecture similar to its Twinscan platform. The supplier had to build entirely new engineering and subsystems modules to accommodate the vacuum environment required by EUV's short light wavelength. The wavelength of EUV light is 13.5 nm, or more than 10 times shorter than current lithographic techniques, ASML points out.

ASML says the tool's optical path, reticle, and wafer stages are housed in vacuum minienvironments. The system also uses reflective optics and reflective reticles, unlike current state-of-the-art systems.


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