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Brave New Materials

Articles on the defect, process-control, and yield issues associated with integrating advanced materials into process recipes.

(Brave New Materials) Reclaiming copper/low-k control wafers during development of 0.13- and 0.10-µm devices
A series of in-house experiments demonstrates that methods for reclaiming copper control wafers involving CMP or a universal chemistry can restore wafers to near-pristine condition. (September 2002)

(Brave New Materials) Evaluating the impact of an acetylenic diol­type surfactant on DUV lithography
Experiments show that an acetylenic diol­type surfactant in photoresist developer improves the wetting of the developer on DUV resist surfaces, leading to faster and more-uniform development. (June 2002)

(Brave New Materials) Experimenting with new cleaning technologies for use in semiconductor manufacturing
Advanced device designs and the integration of copper and low-k dielectrics in IC fabrication have created a need for sophisticated and compatible cleaning chemistries. (April 2002)

(Brave New Materials) Using a cryogenic aerosol process to clean copper, low-k materials without damage
Tests demonstrate that an aerosol cleaning technology using argon and nitrogen is compatible with copper and low-k processes and effective at removing associated particle defects. (February 2002)

(Brave New Materials) Implementing SiGe technology to produce heterojunction bipolar transistors
The development of a low-temperature UHV/CVD technique for depositing epitaxial silicon has made it possible to implement high-yield production of SiGe heterojunction bipolar transistors. (July 2001)

(Brave New Materials) Testing self-primed spin-on low-k materials to optimize the cost of ownership
Significant process-cost savings could be achieved by including an adhesion promoter in spin-on dielectric formulations. (June 2001)

(Brave New Materials) Developing a modified ICP process to strip resist without damaging low-k dielectric film
Inductively coupled plasma ashing experiments demonstrate that lowering the pressure and temperature of the plasma chamber reduces the diffusion of oxygen into the low-k dielectric layer. (April 2001)

(Brave New Materials) Addressing the challenges of spin-on low-k dielectric dispense management
Optimizing dispense tool designs and SOD management will require cooperation between equipment manufacturers, materials suppliers, and end-users. (February 2001)


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